Branching Ratio Measurements for Ge I and Ge II

Ge(Li)-Ge(Li) coincidence measurements in 132Xe

2014 Gamma-gamma coincidence measurements were carried out on the decay of 132I with two Ge(Li) detectors and a two parameter system. Several new transitions were observed. From these results, 18 new levels at 2 167.3, 2 187.4, 2 303.6, 2 916.9, 2 935.6, 2 959.1, 3 076.4, 3 112.1,3 122.3,3 155.4, 3 192.8, 3 214.3, 3 226.8, 3 237.4, 3 260.0, 3 319.6, 3 354.0, and 3 385.1 keV were placed in the 1...

Damage and strain iin epitaxial Ge $ i , - ,

The damage and strain induced by irradiation of both relaxed and pseudomorphic Ge,Si,-, films on Si(100) with 100 keV 28Si ions at room temperature have been studied by MeV 4He channeling spectrometry and x-ray double-crystal diffractometry. The ion energy was chosen to confine the major damage to the films. The results are compared with experiments for room temprature Si irradiation of Si( 100...

RGe(I)Ge(I)R Compound (R ) PhC(NtBu)2) with a Ge-Ge Single Bond and a Comparison with the Gauche Conformation of Hydrazine

Test Capability Requirements 40 GE and 100 GE Physical Layers

One of the greatest challenges facing the communications industry today is the necessity for bandwidth expansion in the network’s core. In the past, the driving force behind growing bandwidth demand was the Internet data explosion. Today, the driving force is video and the Internet traffic pushing that video, whether it is from the consumer side with video-content providers such as YouTube or H...

Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures. It is revealed that ...